Electrostatic potential measurement at the Pt/TiO₂ interface using electron holography

The measurement of electrostatic potentials in core/shell GaN nanowires using off-axis electron holography

Core-shell GaN nanowires are expected to be building blocks of future light emitting devices. Here we apply off-axis electron holography to map the electrostatic potential distributions in such nanowires. To access the cross-section of selected individual nanowires, focused ion beam (FIB) milling is used. Furthermore, to assess the influence of FIB damage, the dopant potential measured from an ...

Three-dimensional reconstructions of electrostatic potential distributions with 1.5-nm resolution using off-axis electron holography.

Three-dimensional (3D) reconstruction experiments were carried out by observing high-resolution 3D electrostatic potential distributions of Pt nanoparticles using off-axis electron holographic tomography. These Pt nanoparticles were mounted on the surfaces of amorphous silicon pillars. In order to realize high-resolution observation, we developed a mechanically stable 3D specimen holder with sm...

Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography.

Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron holography to characterize an electrically-biased Si p-n junction by measuring its electrostatic potential,...

Determination of the electrostatic potential distribution in Pt/Fe:SrTiO3/Nb:SrTiO3 thin-film structures by electron holography

We determined the electrostatic potential distribution in pristine Pt/Fe:SrTiO3/Nb:SrTiO3 structures by electron holography experiments, revealing the existence of a depletion layer extending into the Nb-doped bottom electrode. Simulations of potential profiles in metal-insulator-metal structures were conducted assuming different types and distributions of dopants. It is found that the presence...

Electrostatic View at the Interface.